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data s he et www.rohm.com ? 2014 rohm co., ltd. all rights reserved. r6030enz nch 600v 30a power mosfet reverse diode dv/dt dv/dt *4 15 v/ns junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c avalanche current, repetitive i ar 5.2 a power dissipation (t c = 25c) p d 120 w avalanche energy, single pulse e as *3 636 mj avalanche energy, repetitive e ar *3 0.96 mj pulsed drain current i d,pulse *2 ? 80 a gate - source voltage v gss ? 20 v continuous drain current t c = 25c i d *1 ? 30 a t c = 100c i d *1 ? 16.3 a drain - source voltage v dss 600 v taping code c8 marking r6030enz l absolute maximum ratings (t a = 25c) parameter symbol value unit 6) pb-free lead plating ; rohs compliant l packaging specifications type packaging tube reel size (mm) - l application tape width (mm) - switching power supply basic ordering unit (pcs) 360 l features l inner circuit 1) low on-resistance. 2) fast switching speed. 3) gate-source voltage (v gss ) guaranteed to be ? 20v. 4) drive circuits can be simple. 5) parallel use is easy. l outline v dss 600v to-3pf r ds(on) (max.) 0.130 w i d 30a p d 120w (1) gate (2) drain (3) source * 1 body diode (1) (3) (2) 1/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz w gate input resistance r g f = 1mhz, open drain - 3.6 - 0.115 0.130 t j = 125c - 0.255 - v static drain - source on - state resistance r ds(on) *5 v gs = 10v, i d = 14.5a w t j = 25c - gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 2 - 4 gate - source leakage current i gss v gs = ? 20v, v ds = 0v - - ? 100 na m a t j = 25c - 0.1 100 t j = 125c - - 1000 zero gate voltage drain current i dss v ds = 600v, v gs = 0v v drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 600 - - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. soldering temperature, wavesoldering for 10s t sold - - 265 c thermal resistance, junction - ambient r thja - - 40 c/w thermal resistance, junction - case r thjc - - 1.04 c/w l thermal resistance parameter symbol values unit min. typ. max. drain - source voltage slope dv/dt v ds = 480v 50 v/ns t j = 25c l absolute maximum ratings parameter symbol conditions values unit 2/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz *1 limited only by maximum temperature allowed. *2 p w ? 10 m s, duty cycle ? 1% *3 i d = 5.2a, v dd = 50v *4 reference measurement circuits fig.5-1. *5 pulsed gate plateau voltage v (plateau) v dd ? 300v, i d = 30a - 6.5 - nc gate - source charge q gs *5 i d = 30a - 15 - gate - drain charge q gd *5 v gs = 10v total gate charge q g *5 v dd ? 300v unit min. typ. max. v - 45 - - - 85 - l gate charge characteristics (t a = 25c) parameter symbol conditions values ns rise time t r *5 i d = 15a - 55 - turn - off delay time t d(off) *5 r l = 20 w turn - on delay time t d(on) *5 v dd ? 300v, v gs = 10v - 40 - - 190 - fall time t f *5 r g = 10 w - 60 190 - pf effective output capacitance, time related c o(tr) - 400 - effective output capacitance, energy related c o(er) v gs = 0v v ds = 0v to 480v - 82 - s input capacitance c iss v gs = 0v - 2100 - pf output capacitance c oss transconductance g fs *5 v ds = 10v, i d = 15a 8 16 - v ds = 25v - 1900 - reverse transfer capacitance c rss f = 1mhz - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. 3/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz ws/k r th2 0.469 c th2 0.0547 r th3 1.22 c th3 1.09 r th1 0.0865 k/w c th1 0.00598 l typical transient thermal characteristics symbol value unit symbol value unit - 15 - m c peak reverse recovery current i rrm *5 - 45 - a v reverse recovery time t rr *5 i s = 30a di/dt = 100a/ m s - 660 - ns reverse recovery charge q rr *5 forward voltage v sd *5 v gs = 0v, i s = 30a - - 1.5 a inverse diode direct current, pulsed i sm *2 - - 80 a inverse diode continuous, forward current i s *1 t c = 25c - - 30 l body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. 4/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz l electrical characteristic curves 0 20 40 60 80 100 120 0 50 100 150 200 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25oc single pulse r th(ch-a)(t) = (t) r th(ch- a) r th(ch- a) = 40oc/w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 fig.1 power dissipation derating curve power dissipation : p d /p d max. [%] junction temperature : t j [ c] fig.2 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] fig.3 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [oc] 5/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz l electrical characteristic curves 0 3 6 9 12 15 0 1 2 3 4 5 t a =150oc pulsed v gs = 10.0v v gs = 4.5v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 5.5v v gs = 5.0v v gs = 6.0v 0 5 10 15 20 25 30 0 10 20 30 40 50 t a =150oc pulsed v gs = 10.0v v gs = 4.5v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v v gs = 5.5v v gs = 5.0v fig.4 typical output characteristics(i) fig.5 typical output characteristics(ii) fig.6 t j = 150 c typical output characteristics(i) fig.7 t j = 150 c typical output characteristics(ii) drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] drain current : i d [a] drain current : i d [a] drain - source voltage : v ds [v] drain current : i d [a] drain - source voltage : v ds [v] 0 3 6 9 12 15 0 1 2 3 4 5 t a =25oc pulsed v gs = 10.0v v gs = 4.5v v gs = 8.0v v gs = 7.0v v gs = 6.0v v gs = 5.0v 0 5 10 15 20 25 30 0 10 20 30 40 50 t a =25oc pulsed v gs = 10.0v v gs = 4.5v v gs = 8.0v v gs = 7.0v v gs = 6.0v v gs = 5.0v 6/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz l electrical characteristic curves 500 550 600 650 700 750 800 850 900 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 0 2 4 6 8 10 t a =125oc t a =75oc t a =25oc t a = - 25oc v ds = 10v 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 v ds = 10v i d = 1ma 0.01 0.1 1 10 100 0.01 0.1 1 10 100 t a = - 25oc t a =25oc t a =75oc t a =125oc v ds = 10v fig.9 typical transfer characteristics fig.8 breakdown voltage vs. junction temperature drain - source breakdown voltage : v (br)dss [v] drain current : i d [a] fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] junction temperature : t j [ c ] gate - source voltage : v gs [v] 7/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz l electrical characteristic curves fig.14 static drain - source on - state resistance vs. drain current 0 50 100 150 200 250 300 350 400 0 5 10 15 20 i d = 30a i d = 14.5a t a =25oc 10 100 1000 10000 0.01 0.1 1 10 100 t a =25oc v gs = 10v 0 50 100 150 200 250 300 350 400 -50 -25 0 25 50 75 100 125 150 v gs = 10v i d = 14.5a 10 100 1000 10000 0.01 0.1 1 10 100 t a =125oc t a =75oc t a =25oc t a = - 25oc v gs = 10v fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [m w ] gate - source voltage : v gs [v] fig.13 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [m w ] junction temperature : t j [oc] static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] fig.15 static drain - source on - state resistance vs. drain current static drain - source on-state resistance : r ds(on) [m w ] drain current : i d [a] 8/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz l electrical characteristic curves 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 200 400 600 t a =25oc 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 1000 c oss c rss c iss t a =25oc f = 1mhz v gs = 0v 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) t a = 25oc v dd = 300v v gs = 10v r g = 10 w 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160 180 200 t a = 25oc v dd = 300v i d = 30a fig.16 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.18 switching characteristics switching time : t [ns] drain current : i d [a] fig.19 dynamic input characteristics total gate charge : q g [nc] gate - source voltage : v gs [v] coss stored energy : e oss [uj] fig.17 coss stored energy drain - source voltage : v ds [v] 9/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz l electrical characteristic curves reverse recovery time : t rr [ns] 10 100 1000 10000 0.1 1 10 100 t a =25 oc di / dt = 100a / m s v gs = 0v 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs =0v fig.20 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.21 reverse recovery time vs.inverse diode forward current inverse diode forward current : i s [a] 10/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform fig.4-1 dv/dt measurement circuit fig.4-2 dv/dt waveform fig.5-1 di/dt measurement circuit fig.5-2 di/dt waveform 11/12 2014.03 - rev.b downloaded from: http:///
www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet r6030enz l dimensions (unit : mm) dimension in mm / inches d a2 e f b1 b x a e1 e a4 q c a a1 l p a to -3pf min max min max a 26.30 26.70 1.035 1.051 a1 2.30 2.70 0.091 0.106 a2 26.30 26.70 1.035 1.051 a4 9.80 10.20 0.386 0.402 b 0.65 0.95 0.026 0.037 b1 1.80 2.20 0.071 0.087 c 0.80 1.10 0.031 0.043 d 15.30 15.70 0.602 0.618 e 5.30 5.70 0.209 0.224 e 0.215 - e1 2.80 3.20 0.110 0.126 f 4.30 4.70 0.169 0.185 l 14.60 15.00 0.575 0.591 p 3.40 3.80 0.134 0.150 q 3.10 3.50 0.122 0.138 x - 0.50 - 0.020 dim milimeters inches 5.45 12/12 2014.03 - rev.b downloaded from: http:///
r1102 a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. notice ro hm cu stome r s upport sy s tem h ttp :// www.r oh m .co m/ co n tact / thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. no tes the information contained herein is subject to change without notice. before you use our products, pl ease contact our sales representative and verify th e la tes t specifica - tion s : alt hou gh rohm is contin uous ly wor ki ng to im pr ove p ro du ct r eli a bility and qualit y, semicon - du c tor s c an bre a k d ow n and ma lf un ct io n du e to var io us f ac to rs. th e re fore, in or der to prevent pe r so nal in ju ry or fi re ar isi ng f ro m fa ilur e, please ta ke sa f ety mea s ur es su ch as com plyin g wi th th e de r at in g ch ara ct er ist ic s, impl e menting redundant and f ir e preve nt ion designs, and u tilizin g ba ck up s a nd f ail - sa fe p ro ce du re s. ro hm shall have no responsibility for any damages arising out of the use of our poducts b ey ond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not gr ant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as ex emplified bel ow), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for an y damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) 14) downloaded from: http:///

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